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Nonlinear optical (NLO) crystals with superior properties are significant for advancing laser technologies and applications. Introducing rare earth metals to borates is a promising and effective way to modify the electronic structure of a crystal to improve its optical properties in the visible and ultraviolet range. In this work, we computationally discover inversion symmetry breaking in EuBa₃(B₃O₆)₃, which was previously identified as centric, and demonstrate noncentrosymmetry via synthesizing single crystals for the first time by the floating zone method. We determine the correct space group to beP6¯. The material has a large direct bandgap of 5.56 eV and is transparent down to 250 nm. The complete anisotropic linear and nonlinear optical properties were also investigated with ad₁₁of ∼0.52 pm/V for optical second harmonic generation. Further, it is Type I and Type II phase matchable. This work suggests that rare earth metal borates are an excellent crystal family for exploring future deep ultraviolet (DUV) NLO crystals. It also highlights how first principles computations combined with experiments can be used to identify noncentrosymmetric materials that have been wrongly assigned to be centrosymmetric. 

Abstract The pursuit of smaller, energy‐efficient devices drives the exploration of electromechanically active thin films (<1 µm) to enable micro‐ and nano‐electromechanical systems. While the electromechanical response of such films is limited by substrate‐induced mechanical clamping, large electromechanical responses in antiferroelectric and multilayer thin‐film heterostructures have garnered interest. Here, multilayer thin‐film heterostructures based on antiferroelectric PbHfO₃and ferroelectric PbHf_1‐xTi_xO₃overcome substrate clamping to produce electromechanical strains >4.5%. By varying the chemistry of the PbHf_1‐xTi_xO₃layer (x = 0.3‐0.6) it is possible to alter the threshold field for the antiferroelectric‐to‐ferroelectric phase transition, reducing the field required to induce the onset of large electromechanical response. Furthermore, varying the interface density (from 0.008 to 3.1 nm⁻¹) enhances the electrical‐breakdown field by >450%. Attaining the electromechanical strains does not necessitate creating a new material with unprecedented piezoelectric coefficients, but developing heterostructures capable of withstanding large fields, thus addressing traditional limitations of thin‐film piezoelectrics.